Performance and Comparative Analysis of Heterojunction Structure Based GAA-NWTFET for Low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01614-2.pdf
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1. Estimation of process-induced variability in SiGe-GAA-NWTFET to improve reliability;Micro and Nanostructures;2024-05
2. Gate-All-Around Nanowire TFET with Heterojunction and Core Insulator: Design and Analysis;ECS Journal of Solid State Science and Technology;2023-11-01
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