Parameter Variation Analysis of Dopingless and Junctionless Nanotube MOSFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01303-0.pdf
Reference30 articles.
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3. Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP (2009) Junctionless multigate field-effect transistor. Appl Phys Lett 94(5):053511
4. Choi SJ, Moon DI, Kim S, Duarte JP, Choi YK (2010) Sensitivity of threshold voltage to nanowire width variation in junctionless transistors. IEEE Electron Device Lett 32(2):125–127
5. Gundapaneni S, Bajaj M, Pandey RK, Murali KV, Ganguly S, Kottantharayil A (2012) Effect of band-to-band tunneling on junctionless transistors. IEEE Trans Electron Devices 59(4):1023–1029
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