Exploring the Self-Heating Effects & Its Impact on Thermal Noise for Dielectric Pocket Packed Double-Gate-All-Around (DPP-DGAA) MOSFETs-Reference-Cited by-同舟云学术

Exploring the Self-Heating Effects & Its Impact on Thermal Noise for Dielectric Pocket Packed Double-Gate-All-Around (DPP-DGAA) MOSFETs

Published:2022-02-21 Issue:16 Volume:14 Page:10217-10224
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Purwar Vaibhav^ORCID,Gupta Rajeev,Tiwari Pramod Kumar,Dubey Sarvesh

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01727-2.pdf

Reference29 articles.

1. Moore More (2017) International Roadmap for Devices and Systems (IRDS). https://irds.ieee.org/images/files/pdf/2017/2017IRDS_ES.pdf. Accessed 09 March 2021

2. Kim Y-B (2010) Challenges for nanoscale MOSFETs and emerging nanoelectronics. Trans Electron Electron Mater 11:93–105. https://doi.org/10.4313/TEEM.2010.11.3.093

3. Song Y, Choi WY, Park JH, Lee JD, Park BG (2006) Design optimization of Gate-all-around (GAA) MOSFETs. IEEE Trans Nanotechnol 5(3):186–191. https://doi.org/10.1109/TNANO.2006.869952

4. Colinge JP (2004) Multiple-gate SOI MOSFETs. Solid-State Electron 48:897–905. https://doi.org/10.1016/j.sse.2003.12.020

5. Colinge JP (2007) Multiple-gate SOI MOSFETs. Microelectron Eng 84:2071–2076. https://doi.org/10.1016/j.mee.2007.04.038

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel method to reduce heat in semiconductor field-effect transistors;Multiscale and Multidisciplinary Modeling, Experiments and Design;2023-11-30

2. Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance;ECS Journal of Solid State Science and Technology;2023-02-01

3. Investigation and optimization of electro-thermal performance of Double Gate-All-Around MOSFET;Microelectronics Journal;2022-11

4. Origin of Heating Inside 3D FINFET and GAA Structures;Silicon;2022-07-02

5. A single gate SiGe/Si tunnel FET with rectangular HfO₂ dielectric pocket to improve I _on/I _amb current ratio;Semiconductor Science and Technology;2022-05-10