Origin of Heating Inside 3D FINFET and GAA Structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02002-0.pdf
Reference32 articles.
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3. Yeo Y-C, King T-J, Hu C (2003) MOSFET gate leakage modelling and selection guide for alternative gate dielectrics based on leakage considerations. IEEE Trans Electron Devices 50(4):1027–1035. https://doi.org/10.1109/TED.2003.812504.
4. Chen J, Chan TY, Chen IC, Ko PK, Hu C (1987) Sub breakdown drain leakage current in MOSFET. Electron device letters 8(11):515–517. https://doi.org/10.1109/EDL.1987.26713.
5. Hisamoto D, Lee WC, Kedzierski J, Anderson E, Takeuchi H, Asano K et al (1998) A folded-channel MOSFET for deep-sub-tenth micron era. IEDM Tech Dig 1998:1032–1034. https://doi.org/10.1109/IEDM.1998.746531.
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