Abstract
Abstract
The ambipolar conduction in the tunnel field-effect transistors (TFETs) is considered the primary hindrance in its usage in complimentary digital circuits and low-power applications. The higher ambipolarity puts a serious question on the efficiency of a TFET, which is a result of channel/drain (C/D) tunneling. This further leads to a significant reduction in the current switching ratio (I
on/I
amb). This paper presents an n-type Si0.6Ge0.4/Si heterostructure TFET with a rectangular dielectric pocket (RDP) to maximize I
on/I
amb current ratio. This has been achieved by suppressing the ambipolarity and improving the on current simultaneously. The existence of Si1−x
Gex in the source and silicon channel provides improved on current (I
on) with controlled leakage current (I
off). Similarly, high-k RDP in the drain reduces ambipolar current (I
amb) significantly and thus, exhibits a higher I
on/I
amb ratio. The different parameters such as x-distance from the C/D interface, y-distance from the gate/drain interface, and dielectric constant has been considered to provide a higher I
on/I
amb ratio of
6.30
×
10
7
. The effect of the presence of interface trap charges and variable Ge mole fraction has been studied. The current ratio can be further improved to
4.0
×
10
12
with an underlap length of 25 nm.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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