Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

Author:

Pratap YogeshORCID,Verma Jay Hind Kumar

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference24 articles.

1. International Technology Roadmap for Semiconductor Online [http://public.itrs.net] 2012

2. Li C, Zhuang Y, Han R (2011) Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension. Microelectron Eng 42:341–346

3. Taur Y (2000) An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Letter 21(5):245–247

4. Yu B, Lu H, Liu M, Taur Y (2007) Explicit continuous model for double gate and surrounding gate MOSFET. IEEE Trans Electron Devices 54(10):2715–2722

5. Kumar , P., Joy , D., Jeblin., B. K. : Nanoscale tri-gate MOSFET for Ultra low power applications using high-k dielectrics. In 5th IEEE, International Nano-electronics Conference, pp. 12–19, (2013)

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