Author:
Gupta Abhinav,Pandey Amit Kumar,Upadhyay Shipra,Gupta Vidyadhar,Gupta Tarun Kumar,Pandey Digvijay,Bajpai Shrish,Chandel Vishal Singh
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Clark LT, Vashishtha V, Shifren L, Gujja A, Sinh S, Cline B, Ramamurthy C, Yeric G (2016) ASAP7: A 7-nm finFET predictive process design kit. Microelectron J 53:105–115
2. Ajayan J, Nirmal D, Tayal S, Bhattacharya S, Arivazhagan L, Fletcher ASA, Murugapandiyan P, Ajitha D (2021) Nanosheet field effect transistors-A next generation device to keep Moore’s law alive: An intensive study. Microelectron J 114:105141
3. International Roadmap for Devices and Systems (IRDS): More Moore (2017) https://irds.ieee.org/images/files/pdf/2017/ 2017IRDS_ES.pdf. Accessed 06 Oct 2020.
4. Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP (2019) Junctionless multigate field-effect transistor. Applied Physics Letters 95(5):053511-1–053511-2
5. Sallese JM, Chevillon N, Lallement C, Iniguez B, Pregaldiny F (2011) Charge-based modeling of junctionless double-gate field-effect transistors. IEEE Trans Electron Devices 58(8):2628–2637
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