Author:
Narendar Vadthiya,Girdhardas Kalola Ankit
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference48 articles.
1. Robert HD, Fritz HG, Hwa-Nien Y, V Leo R, Ernest B, Ander RL (1974) Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J Solid-State Circ 9:256–268
2. Mishra UK, Brown AS, Rosenbaum SE (1988) DC and RF performance of 0.1-μm gate length Al0.48As/Ga0.47In0.53As pseudomorphic HEMT, IEDM Technical Digest, pp 180–183
3. Suzuki K, Tanaka Y, Tosaka Y, Horie H, Arimoto Y, Itoh T (1994) Analytical surface potential expression for thin-film double-gate SOI MOSFET’s. Solid-State Electron 37:327–332
4. Tsormpatzoglou A, Dimitriadis CA, Clerc R, Pananakakis G, Ghibaudo G (2008) Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs. IEEE Trans Electron Device 55 (9):2512–2516
5. Pi-Ho Hu V, Fan M-L, Su P, Chuang C-T (2013) Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET. IEEE Trans Electron Device 60(10):3596–3600
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