Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate-Reference-Cited by-同舟云学术

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Published:2009-11-14 Issue:2 Volume:5 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Cirlin G. E.,Bouravleuv A. D.,Soshnikov I. P.,Samsonenko Yu B.,Dubrovskii V. G.,Arakcheeva E. M.,Tanklevskaya E. M.,Werner P.

Abstract

Abstract We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11671-009-9488-2.pdf

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