The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot-Reference-Cited by-同舟云学术

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

Published:2007-09-13 Issue:10 Volume:2 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Rainò Gabriele,Visimberga Giuseppe,Salhi Abdelmajid,Todaro Maria T,De Vittorio Massimo,Passaseo Adriana,Cingolani Roberto,De Giorgi Milena

Abstract

Abstract We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11671-007-9092-2.pdf

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