Effective-mass theory for InAs/GaAs strained coupled quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.11575/fulltext
Reference29 articles.
1. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
2. Experimental probing of quantum-well eigenstates
3. Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures
4. Valence band engineering in strained-layer structures
5. Heteroepitaxial ultrafine wire‐like growth of InAs on GaAs substrates
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