Oxidation-induced stress in Si nanopillars
Author:
Funder
JST-ACCEL
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-019-03670-x.pdf
Reference59 articles.
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3. Imamoto T, Ma Y, Muraguchi M, Endoh T (2015) Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60 nm CMOS technology on 300 mm wafer process. Jpn J Appl Phys 54:04DC11
4. Guerfi Y, Larrieu G (2016) Vertical silicon nanowire field effect transistors with nano scale gate-all-around. Nanoscale Res Lett 11:210. https://doi.org/10.1186/s11671-016-1396-7
5. Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan H, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H (2010) A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nat Mater 9:721–724. https://doi.org/10.1038/nmat2804
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