Author:
Xia Sihao,Liu Lei,Diao Yu,Kong Yike
Funder
the Fundamental Research Funds for the Central Universities-China
the Six Talent Peaks Project in Jiangsu Province-China
the Natural Science Foundation of Jiangsu Province-China
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference36 articles.
1. Uchiyama S, Takagi Y, Niigaki M, Kan H, Kondoh H (2005) GaN-based photocathodes with extremely high quantum efficiency. Appl Phys Lett 86:103511
2. Wang X, Chang B, Ren L, Gao P (2011) Influence of the p-type doping concentration on reflection-mode GaN photocathode. Appl Phys Lett 98:082109
3. Nishitani T, Honda Y, Amano H (2015) Photocathode electron beam sources using GaN and InGaN with NEA surface. Proc SPIE Int Soc Opt Eng 9363:93630T
4. Hao G, Zhang Y, Jin M, Feng C, Chen X, Chang B (2015) The effect of surface cleaning on quantum efficiency in AlGaN photocathode. Appl Surf Sci 324:590–593
5. Wang H, Qian Y, Du Y, Xu Y, Lu L, Chang B (2014) Resolution characteristics for reflection-mode exponential-doping GaN photocathode. Appl Opt 53:335–340
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