Comparison Study of Structural Stability and Optoelectronic Properties of Al0.5Ga0.5N Thin Film and Nanowire Photocathode Surfaces under Different Activation Methods
Author:
Affiliation:
1. Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
2. Science and Technology on Low-Light-Level Night Vision Laboratory, Xi’an 710065, China
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
LLL Night Vision Technology Key Laboratory Fund
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c05470
Reference29 articles.
1. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices
2. GaN photocathodes for UV detection and imaging
3. Study of spectral response characteristics of negative electron affinity GaN photocathode
4. Prospect for high brightness III–nitride electron emitter
5. GaN-based photocathodes with extremely high quantum efficiency
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