Mass spectroscopic measuring of SiCln (n = 0–2) radicals in SiCl4 RF glow discharge plasma
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-007-2098-4.pdf
Reference21 articles.
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2. Liu H, Jung S, Fujimura Y, Fukai C (2001) Jpn J Appl Phys 40:44
3. Cicala G, Capezzuto P, Bruno G (2001) Thin Solid Films 383:203
4. Lin KX, Lin XY, Chi LF, Yu CY, Yao RH, Yu YP (2003) Chin Phys 12:1009
5. Chen KJ, Huang XF, Xu J (2001) Chin Phys 10:748
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1. Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4 /O2 /Ar Inductively Coupled Plasmas;Plasma Processes and Polymers;2013-05-28
2. Halogenated silanes, radicals, and cations: Theoretical predictions on ionization energies, structures and potential energy surfaces of cations, proton affinities, and enthalpies of formation;International Journal of Mass Spectrometry;2008-09
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