Halogenated silanes, radicals, and cations: Theoretical predictions on ionization energies, structures and potential energy surfaces of cations, proton affinities, and enthalpies of formation
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Instrumentation
Reference111 articles.
1. Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine
2. Mass spectroscopic measuring of SiCln (n = 0–2) radicals in SiCl4 RF glow discharge plasma
3. Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy
4. Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma
5. Substrate temperature effects on surface reactivity of SiFx (x=1, 2) radicals in fluorosilane plasmas
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1. Refining the thermochemical properties of CF, SiF, and their cations by combining photoelectron spectroscopy, quantum chemical calculations, and the Active Thermochemical Tables approach;Physical Chemistry Chemical Physics;2023
2. Cooperative Effect of Noncovalent Interactions on Tetrel Bonding in Halogenated Silanes;ChemPhysChem;2022-02
3. Ab Initio Chemical Kinetics for the Thermal Decomposition of SiH2+ and SiH3+ Ions and Related Reverse Ion–Molecule Reactions of Interest to PECVD of α-Si:H Films;Plasma Chemistry and Plasma Processing;2019-07-24
4. Ab Initio Chemical Kinetics for the Thermal Decomposition of SiH4 + Ion and Related Reverse Ion–Molecule Reactions of Interest to PECVD of a-Si:H Films;Plasma Chemistry and Plasma Processing;2017-06-03
5. Capturing H and H2by SiHx+(x≤ 4) ions: Comparison between Langevin and quantum statistical models;Japanese Journal of Applied Physics;2017-01-10
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