Polycrystalline diamond MESFETs by Au-mask technology for RF applications-Reference-Cited by-同舟云学术

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Published:2013-02-27 Issue:4 Volume:56 Page:957-962
ISSN:1674-7321
Container-title:Science China Technological Sciences
language:en
Short-container-title:Sci. China Technol. Sci.

Author:

Feng ZhiHong,Wang JingJing,He ZeZhao,Dun ShaoBo,Yu Cui,Liu JinLong,Zhang PingWei,Guo Hui,Li ChengMing,Cai ShuJun

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s11431-013-5163-z.pdf

Reference14 articles.

1. Kasu M, Ueda K, Ye H, et al. High RF output power for H-terminated diamond FETs. Diamond Relat Mater, 2006, 15: 783–786

2. Taniuchi H, Umezawa H, Arima T, et al. High frequency performance of diamond field effect transistor. IEEE Electron Dev Lett, 2001, 22: 390–392

3. Ye H, Kasu M, Ueda K, et al. Temperature dependent DC and RF performance of diamond based MESFET. Diamond Relat Mater, 2006, 15: 787–791

4. Spitsyn B V, Bouilov L L, Derjaguin B V, et al. Vapor growth of diamond on diamond and other surfaces. Cryst Growth, 1981, 52: 219–226

5. Kurihara K, Sasaki K, Kawarada M, et al. High-rate synthesis of diamond by DC plasma-jet chemical vapor-deposition. Appl Phys Lett, 1988, 52: 437–438

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1. Normally-off C-H Diamond FETs With Partial Al/C-O Diamond Junction Attaining Low off-State Current;IEEE Transactions on Electron Devices;2022-12

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3. High frequency hydrogen-terminated diamond MESFET with an fmax of 103GHz;Materials Today Communications;2021-09

4. A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors;Applied Physics Letters;2020-11-16

5. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor;Acta Physica Sinica;2018

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