Characteristics of InGaN multiple quantum well blue-violet laser diodes-Reference-Cited by-同舟云学术

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Characteristics of InGaN multiple quantum well blue-violet laser diodes

Published:2006-12 Issue:6 Volume:49 Page:727-732
ISSN:1006-9321
Container-title:Science in China Series E: Technological Sciences
language:en
Short-container-title:SCI CHINA SER E

Author:

Li Deyao,Zhang Shuming,Wang Jianfeng,Chen Jun,Chen Lianghui,Chong Ming,Zhu Jianjun,Zhao Degang,Liu Zongshun,Yang Hui,Liang Junwu

Publisher

Springer Science and Business Media LLC

Link

http://link.springer.com/content/pdf/10.1007/s11431-006-2023-0.pdf

Reference15 articles.

1. Nakamura S, Senoh M, Nagahama S, et al. InGaN-based multi-quantum-well-structure laser diodes. Jpn J Appl Phys B, 1996, 35: L74–L76

2. Watanabe K, Nakanishi N, Yamaqzak T, et al. Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN. Appl Phys Lett, 2003, 82: 715–717

3. Kim D J, Moon Y T, Song K M, et al. Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs. J Cryst Growth, 2000, 221: 368–372

4. Lee C R. N-type doping behavior of Al0.15Ga0.85N:Si with various Si incorporations. J Cryst Growth, 2002, 246: 25–30

5. Li J, Oder T N, Nakarmi M L. Optical and electrical properties of Mg-doped p-type AlxGa1−x N. Appl Phys Lett, 2002, 80: 1210–1212

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure;Superlattices and Microstructures;2016-03

2. Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes;Science China Technological Sciences;2012-01-07

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