Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs-Reference-Cited by-同舟云学术

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Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs

Published:2000-12 Issue:1-4 Volume:221 Page:368-372
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Dong-Joon,Moon Yong-Tae,Song Keun-Man,Choi Chel-Jong,Ok Young-Woo,Seong Tae-Yeon,Park Seong-Ju

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

2. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

3. Properties of Ga1-xInxN Films Prepared by MOVPE

4. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

5. Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering

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1. Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing;Advanced Physics Research;2023-04-12

2. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number;Physica B: Condensed Matter;2022-04

3. Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm;Fundamental Research;2021-11

4. Recent Developments in Semipolar InGaN Laser Diodes;Semiconductors;2021-02

5. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness;RSC Advances;2020

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