Transient Monte Carlo simulation of phonon transport in silicon nanofilms with the local heat source
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11431-023-2512-x.pdf
Reference43 articles.
1. Desai S B, Madhvapathy S R, Sachid A B, et al. MoS2 transistors with 1-nanometer gate lengths. Science, 2016, 354: 99–102
2. Pop E, Sinha S, Goodson K E. Heat generation and transport in nanometer-scale transistors. Proc IEEE, 2006, 94: 1587–1601
3. Chatterjee B, Dundar C, Beechem T E, et al. Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors. J Appl Phys, 2020, 127: 044502
4. Ni C, Aksamija Z, Murthy J Y, et al. Coupled electro-thermal simulation of MOSFETs. J Comput Electron, 2012, 11: 93–105
5. Chen G, Hu B, Jiang Z, et al. Reconstruction of interfacial thermal transport mediated by hotspot in silicon-based nano-transistors. Int J Heat Mass Transfer, 2023, 202: 123676
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