Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Published:2020-01-31 Issue:4 Volume:127 Page:044502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chatterjee Bikramjit¹^ORCID,Dundar Canberk²^ORCID,Beechem Thomas E.³,Heller Eric⁴^ORCID,Kendig Dustin⁵,Kim Hyungtak⁶^ORCID,Donmezer Nazli²^ORCID,Choi Sukwon¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Department of Mechanical Engineering, Boğaziçi University, Bebek, Istanbul 34342, Turkey

3. Nanoscale Sciences Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

4. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA

5. Microsanj, LLC, Santa Clara, California 95051, USA

6. School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, South Korea

Funder

Air Force Office of Scientific Research

National Research Foundation of Korea

The Scientific and Technological Research Council of Turkey

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5123726

Reference80 articles.

1. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

2. Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Microwave AlGaN/GaN HFETs

5. Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs

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