Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-009-0400-3.pdf
Reference16 articles.
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3. Armiento C A, Groves S H. Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes. Appl Phys Lett, 1983, 43: 198–200
4. Cook L W, Bulman G E, Stillman G E. Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements. Appl Phys Lett, 1982, 40: 589–591
5. Li K F, Plimmer S A, David J P R, et al. Low avalanche noise characteristics in thin InP p+-i-n+ diodes with electron initiated multiplication. IEEE Photon Technol Lett, 1999, 11: 364–366
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