The lateral extension of radiation damage in ion-implanted semiconductors

Author:

Fritzsche C. R.,Rothemund W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Reference15 articles.

1. S.V. Campisano, A.E. Barbarino: Appl. Phys.25, 153 (1981)

2. T. Koji, W.F. Tseng, J.W. Mayer: Appl. Phys. Lett.32, 749 (1978)

3. W. Rothemund, C.R. Fritzsche: Appl. Phys.10, 111 (1976)

4. J.F. Gibbons, W.S. Johnson, S.W. Mylroie:Projected Range Statistics, 2nd ed., distributed by Halsted Press (1975)

5. R. M. Burger, R.P. Donvan:Fundamentals of Silicon Integrated Device Technology, Vol. I (Prentice-Hall, Englewood Cliffs, NJ 1967)

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Voltage Contrast Modes in a Scanning Electron Microscope and Their Application;Advances in Imaging and Electron Physics;2016

2. Secondary-electron emission of ion-implanted semiconductors in scanning electron microscopy;Applied Physics A Solids and Surfaces;1994-10

3. Evolution of ion beam damage in solids, and the fractal concept;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986

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