Concentration dependence of the solid-phase epitaxial growth rate in Te implanted Si
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF00901288.pdf
Reference8 articles.
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5. S.U. Campisano, E. Rimini, P. Baeri, G. Foti: Appl. Phys. Lett.37, 170 (1980)
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