Author:
Leitner E.,Bohmayr W.,Fleischmann P.,Strasser E.,Selberherr S.
Reference57 articles.
1. E. Strasser, K. Wimmer, and S. Selberherr. A New Method for Simulation of Etching and Deposition Processes. In 1993 International Workshop on VLSI Process and Device Modeling, pp 54–55, 1993.
2. E.W. Scheckler and A.R. Neureuther. Models and Algorithms for Three-Dimensional Topography Simulation with SAMPLE-3D. IEEE Transactions on Computer-Aided Design of Integrated Circuits, 13: 219–230, 1994.
3. W. Bohmayr, G. Schrom. and S. Selberherr. Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners. In Int.Symposium on VLSI Technology, Systems, and Applications, Taipei, 1995.
4. A.M. Mazzone and G. Rocca. Three-Dimensional Monte Carlo Simulations–Part I: Implanted Profiles for Dopants in Submicron Devices. IEEE Trans. Computer-Aided Design, CAD-3(1): 64–71, 1984.
5. A.M. Mazzone. Three-Dimensional Monte Carlo Simulations–Part II: Recoil Phenomena. IEEE Trans. Computer-Aided Design, CAD-4(1): 110–117, 1985.
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