Annealing behavior ot trap-centers in silicon containing A-swirl defects-Reference-Cited by-同舟云学术

Annealing behavior ot trap-centers in silicon containing A-swirl defects

Published:1982-10 Issue:2 Volume:29 Page:105-111
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Lef�vre H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00632436.pdf

Reference39 articles.

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2. L.J. Bernewitz, K.R. Mayer: Phys. Stat. Sol. (a)16, 579 (1973)

3. H. Föll, B.O. Kolbesen: Appl. Phys.8, 319 (1975)

4. P.M. Petroff, A.J.R. de Kock: J. Crystal Growth30, 117 (1975)

5. H. Föll, B.O. Kolbesen, W. Frank: Phys. Stat. Sol. (a)29, K83 (1975)

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