Investigating the Formation of Defects in Silicon during Gamma Irradiation-Reference-Cited by-同舟云学术

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Investigating the Formation of Defects in Silicon during Gamma Irradiation

Published:2020-03 Issue:2 Volume:49 Page:103-107
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Saurov M. A.,Bulyarskiy S. V.,Lakalin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739720010114.pdf

Reference9 articles.

1. Vavilov, V.S. and Ukhin, N.A., Radiatsionnye defekty v poluprovodnikakh i poluprovodnikovykh priborakh (Radiation Effects in Semiconductors and Semiconductors Devices), Moscow: Atomizdat, 1969; New York: Consultants Bureau, 1977.

2. Borchi, E. and Bruzzi, M., Radiation damage in silicon detectors, Riv. Nuovo Cim., 1994, vol. 17, no. 11, pp. 1–63.

3. Lefèvre, H., Annealing behavior on trap-centers in silicon containing A-swirl defects, Appl. Phys. A, 1982, vol. 29, no. 2, pp. 105–111.

4. Sobolev, N.A., Shek, E.I., Kurbakov, A.I., Rubinova, E.E., and Sokolov, A.E., Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques, Appl. Phys. A, 1996, vol. 62, no. 3, pp. 259–262.

5. Chroneos, A., Londos, C., Sgourou, E.N., and Pochet, P., Point defect engineering strategies to suppress A-center formation in silicon, Appl. Phys. Lett., 2011, vol. 99, no. 24, p. 99241901.

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1. Study of the influence of gamma irradiation on internal friction in dislocation silicon;Applied Radiation and Isotopes;2023-03

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