Semi-empirical Material Removal Model with Modified Real Contact Area for CMP
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Mechanical Engineering
Link
http://link.springer.com/content/pdf/10.1007/s12541-019-00161-6.pdf
Reference22 articles.
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2. Lee, H., Park, Y., Lee, S., & Jeong, H. (2013). Effect of wafer size on material removal rate and its distribution in chemical mechanical polishing of silicon dioxide film. Journal of Mechanical Science and Technology, 27(10), 2911–2916.
3. Zhao, Y., Chang, L., & Kim, S. H. (2003). A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species. Wear, 254, 332–339.
4. Bai, J., Zhao, Y. W., & Wang, Y. G. (2007). A mathematical model for material removal and chemical mechanical synergy in chemical-mechanical polishing at molecular scale. Applied Surface Science, 253, 8489–8494.
5. Lee, H., Lee, D., & Jeong, H. (2016). Mechanical aspects of the chemical mechanical polishing process: A review. International Journal of Precision Engineering and Manufacturing, 17(4), 525–536.
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