Effect of Non-Ionic Surfactant on Chemical Mechanical Planarization Performance in Alkaline Copper Slurry
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Mechanical Engineering
Link
http://link.springer.com/content/pdf/10.1007/s12541-018-0186-9.pdf
Reference41 articles.
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3. Xu, Q. and Chen, L., “A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization,” ECS Journal of Solid State Science and Technology, Vol. 4, No. 3, pp. P101–P107, 2015.
4. Nolan, L. and Cadien, K., “Copper Cmp: The Relationship between Polish Rate Uniformity and Lubrication,” ECS Journal of Solid State Science and Technology, Vol. 1, No. 4, pp. P157–P163, 2012.
5. Kim, H. J., Choi, J. K., Hong, M. K., Lee, K., and Ko, Y., “Contact Behavior and Chemical Mechanical Polishing (CMP) Performance of Hole-Type Polishing Pad,” ECS Journal of Solid State Science and Technology, Vol. 1, No. 4, pp. P204–P209, 2012.
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