Chemical etching of silicon by CO2-laser-induced dissociation of NF3-Reference-Cited by-同舟云学术

Chemical etching of silicon by CO2-laser-induced dissociation of NF3

Published:1988-05 Issue:1 Volume:46 Page:39-50
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Brannon J. H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00615136.pdf

Reference41 articles.

1. T.J. Chuang: J. Chem. Phys.74, 1453 (1981)

2. D. Harradine, F. Read McFeely, B. Roop, J.I. Steinfeld, D. Dennison, L. Hartsough, J.R. Hollahan: Proc. SPIE270, 52 (1981)

3. G.L. Loper, M.D. Tabat: Appl. Phys. Lett.46, 654 (1985)

4. In a private communication, J. Lyman (Los Alamos National Scientific Laboratory) stated that CO2-laser-induced dissociation of NF3 was observed in his laboratory in the early 1970's but never reported

5. D.L. Flamm, V.M. Donnelly, J.A. Mucha: J. Appl. Phys.52, 3633 (1981)

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