Etching of Semiconductors
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-17613-5_15
Reference43 articles.
1. Akane T., K. Sugioka, K. Midorikawa: High-speed etching of hexagonal GaN by laser ablation and successive chemical treatment, Appl. Phys. A 69 [Suppl.], S309 (1999)
2. Aliouchouche A., J. Boulmer, B. Bourguignon, J.P. Budin, D. Débarre, A. Desmur: Laser etching of silicon by chlorine: Effect of post-desorption collisions and chlorine in-diffusion on the laser desorption yield, Appl. Surf. Sci. 69, 52 (1993)
3. Allard M., S. Boughaba, M. Meunier: Laser micromachining of free-standing structures in SiO2-covered silicon, Appl. Surf. Sci. 109–110, 189 (1997)
4. Ashby C.I.H., D.R. Myers, G.A. Vawter, R.M. Biefeld, A.K. Datye: Selective suppression of photochemical dry etching using elevated surface impurity concentrations: A new technique for self-aligned etching, J. Appl. Phys. 68, 2406 (1990)
5. Bockris J.O.M., A.K.N. Reddy: Modern Electrochemistry I and II (Plenum, New York 1977)
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