Resonant Tunnelling and Superlattice Devices: Physics and Circuits-Reference-Cited by-同舟云学术

Resonant Tunnelling and Superlattice Devices: Physics and Circuits

Published:1990 Issue: Volume: Page:181-252
ISSN:0172-5734
Container-title:Physics of Quantum Electron Devices
language:
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Author:

Capasso F.,Sen S.,Beltram F.,Cho A. Y.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-74751-9_7.pdf

Reference99 articles.

1. L. L. Chang, L. Esaki, R. Tsu: “Resonant Tunnelling in Semiconductor Double Barriers”, Appl. Phys. Lett. 593, 24 (1974)

2. M. Tsuchiya, H. Sakaki, J. Yoshino: “ Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunnelling Diode”, Jpn. J. Appl. Phys., L-466, 24 (1985)

3. M. Tsuchiya, H. Sakaki: “Precise Control of Resonant Tunnelling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths”, Jpn. J. Appl. Phys., L185, 25 (1986)

4. M. Tsuchiya, H. Sakaki: “Dependence of Resonant Tunnelling Current on Well Widths in AlAs/GaAs/AlAs Double Barrier Diode Structures”, Appl. Phys. Lett. 88, 49 (1986)

5. S. Muto, T. Inata, H. Ohnishi, N. Yokoyama, S. Hiyamizu: “Effect of Silicon Doping Profile on I—V Characteristics of an AIGaAs/GaAs Resonant Tunnelling Barrier Structure Grown by MBE”, Jpn. J. Appl. Phys., L-577, 25 (1986)

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