Carrier Transport in Low-Dimensional Semiconductors
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-319-06540-3_27-4
Reference128 articles.
1. Ahmed H, Nakazato K (1996) Single-electron devices. Microelectron Engin 32:297
2. Ahmadi E, Keller S, Mishra UK (2016) Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures. J Appl Phys 120:115302
3. Alam MA, Si M, Ye PD (2019) A critical review of recent progress on negative capacitance field-effect transistors. Appl Phys Lett 114:090401
4. Alpichshev Z, Analytis JG, Chu JH, Fisher IR, Chen YL, Shen ZX, Fang A, Kapitulnik A (2010) STM imaging of electronic waves on the surface of Bi2Te3: topologically protected surface states and hexagonal warping effects. Phys Rev Lett 104:016401
5. Analytis JG, Chu J-H, Chen Y, Corredor F, McDonald RD, Shen ZX, Fisher IR (2010) Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements. Phys Rev B 81:205407
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3