Author:
Lukyanchikova N.,Garbar N.,Kudina V.,Smolanka A.,Simoen E.,Claeys C.
Publisher
Springer Berlin Heidelberg
Reference18 articles.
1. Van Der Ziel, A.: Fluctuation Phenomena in Semiconductors. Butterworths Scientific Publications, London (1959)
2. Lukyanchikova, N.: Noise Research in Semiconductor Physics. Gordon and Breach Science Publishers, London (1996)
3. Jayaraman, R., Sodini, C.G.: A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon. IEEE Trans. Electron Devices 36, 1773–1782 (1989)
4. Lukyanchikova, N., Garbar, N., Kudina, V., et al.: On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric. Appl. Phys. Lett. 95, 032101–032103 (2009)
5. Lukyanchikova, N., Petrichuk, M., Garbar, N., et al.: Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistor. J. Appl. Phys. 94, 4461–4469 (2003)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献