On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3180703
Reference24 articles.
1. Multiple-gate SOI MOSFETs
2. Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
3. Low-frequency noise in silicon-on-insulator devices and technologies
4. Impact of floating gate dry etching on erase characteristics in NOR flash memory
5. Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs
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1. A unipolar nano-diode detector with improved performance using the high-k material SiN x;Semiconductor Science and Technology;2018-10-19
2. Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers;Japanese Journal of Applied Physics;2017-03-17
3. Impact of doping concentration on 1/fnoise performances of accumulation-mode Si(100) n-MOSFETs;Japanese Journal of Applied Physics;2016-03-08
4. DC and low frequency noise performances of SOI p-FinFETs at very low temperature;Solid-State Electronics;2013-12
5. Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-κ gate dielectric;Solid-State Electronics;2013-07
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