Scratching by pad asperities in copper electrochemical-mechanical polishing
Author:
Publisher
Springer Science and Business Media LLC
Subject
Metals and Alloys,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/s11771-014-2411-8.pdf
Reference19 articles.
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3. XI K, HE H, XU D, GE R J, MENG Z, JIA X D, YU X H. Ultra low dielectric constant polysilsequioxane films using T8(Me4NO)8 as porogen [J]. Thin Solid Films, 2010, 518: 4768–4772.
4. TERENCE K S W. Time dependent dielectric breakdown in copper low-k interconnects: Mechanisms and reliability models [J]. Materials, 2012, 5: 1602–1625.
5. CHEN F, SHINOSKY M. Soft breakdown characteristics of ultra low-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies [J]. Applied Physics Letters, 2010, 108, 054107.
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