Ultra low dielectric constant polysilsesquioxane films using T8(Me4NO)8 as porogen-Reference-Cited by-同舟云学术

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Ultra low dielectric constant polysilsesquioxane films using T8(Me4NO)8 as porogen

Published:2010-06 Issue:17 Volume:518 Page:4768-4772
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Xi Kai,He Hui,Xu Dan,Ge Renjie,Meng Zhen,Jia Xudong,Yu Xuehai

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. The International Technology Roadmap for Semiconductors,1999

2. In Search of Low- k Dielectrics

3. Low dielectric constant polymers for microelectronics

4. Fracture toughness, adhesion and mechanical properties of low-K dielectric thin films measured by nanoindentation

5. Comparison of mechanical properties of porous and non-porous low-k dielectric films

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