Physically-based modeling for hole scattering rate in strained Si1−x Ge x /(100)Si
Author:
Publisher
Springer Science and Business Media LLC
Subject
Metals and Alloys,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/s11771-015-2539-1.pdf
Reference24 articles.
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3. SONG Qing-wen, ZHANG Yu-ming, ZHANG Yi-men, TANG Xiao-yan. Simulation study on 4H-SiC power devices with high-k dielectric FP termination [J]. Diam Relat Mater, 2012, 22:42–47.
4. MURRAY CONAL E, POLVINO S M, NOYAN I C, MASER J, HOLT M. Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements [J]. Thin Solid Films, 2013, 530: 85–90.
5. SONG Jian-jun, ZHANG He-ming, HU Hui-yong, DAI Xian-ying, XUAN Rong-xi. Valence band structure of strained Si/(111)Si1−x Gex [J]. Sci China Phys Mech Astron, 2010, 53(3): 454–457.
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