Author:
Ryu Jung-Hyun,Cho Byeong-Ok,Hwang Sung-Wook,Moon Sang Heup,Kim Chang-Koo
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Reference19 articles.
1. Boyd, G. D., Coldren, L. A. and Storz, F. G., “Directional Reactive Ion Etching at Oblique Angles”,Appl. Phys. Lett.,36, 583 (1980).
2. Chapman, B., “Glow Discharge Processes”, John Wiley & Sons, Inc., New York (1980).
3. Chen, F. F., “Introduction to Plasma Physics and Controlled Fusion”, Plenum Press, New York (1984).
4. Cho, B.-O., “A Study on the Etch Rate and Profile of Si and SiO2 Film in Fluorocarbon Plasma”, Ph. D. Thesis, Seoul National University (1999).
5. Cho, B.-O., Hwang, S.-W., Lee, G.-R. and Moon, S. H., “Angular De-pendence of the Redeposition Rates During SiO2 Etching in a CF4 Plasma”,J. Vac. Sci. Technol. A 19, 730 (2001).
Cited by
26 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献