Thickness of a modified surface layer formed in a silsesquioxane-based low-k material during etching in a fluorocarbon plasma-Reference-Cited by-同舟云学术

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Thickness of a modified surface layer formed in a silsesquioxane-based low-k material during etching in a fluorocarbon plasma

Published:2003-11 Issue:6 Volume:20 Page:1131-1133
ISSN:0256-1115
Container-title:Korean Journal of Chemical Engineering
language:en
Short-container-title:Korean J. Chem. Eng.

Author:

Hwang Sung-Wook,Lee Gyeo-Re,Min Jae-Ho,Moon Sang Heup

Publisher

Springer Science and Business Media LLC

Subject

General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF02706948.pdf

Reference6 articles.

1. Cho, B.-O., Hwang, S.-W., Ryu, J.-H. and Moon, S. H., “More Vertical Etching Profile Using a Faraday Cage in Plasma Etching”Rev. Sci. Instrum.,70, 2458 (1999).

2. Coburn, J. W. and Chen, M., “Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density,”J. Appl. Phys.,51, 3134 (1980).

3. Hwang, S.-W., Lee, G.-R., Min, J.-H., Moon, S. H., Kim, Y. C., Ryu, H.-K., Cho, Y S. and Kim, J. W., “Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma,”Jpn. J. Appl. Phys.,41, 5782 (2002).

4. Rueger, N. R., Beulens, J. J., Schaepkens, M., Doemling, M. E, Mirza, J. M., Standaert, T. E. F. M. and Oehrlein, G. S., “Role of Steady State Fluorocarbon Films in the Etching of Silicon Dioxide Using CHF3 in an Inductively Coupled Plasma Reactor,”J. Vac. Sci. Technol. A,15, 1881(1997).

5. Ryu, J.-H., Cho, B.-O., Hwang, S.-W., Moon, S. H. and Kim, C.-K., “Trajectories of Ions Inside a Faraday Cage Located in a High Density Plasma Etcher,”Korean J. Chem. Eng.,20, 407 (2003).

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2. Impact of low-k structure and porosity on etch processes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01

3. Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas;Korean Journal of Chemical Engineering;2007-07

4. Ion dynamics in plasma processing for the fabrication of ultrafine structures;Korean Journal of Chemical Engineering;2005-09

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