Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas-Reference-Cited by-同舟云学术

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Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas

Published:2007-07 Issue:4 Volume:24 Page:670-673
ISSN:0256-1115
Container-title:Korean Journal of Chemical Engineering
language:en
Short-container-title:Korean J. Chem. Eng.

Author:

Yun Hyung Jin,Kim Tae Ho,Shin Chee Burm,Kim Chang-Koo,Min Jae-Ho,Moon Sang Heup

Publisher

Springer Science and Business Media LLC

Subject

General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s11814-007-0023-9.pdf

Reference10 articles.

1. S. D. Athavale and D. J. Economou, J. Vac. Sci. Technol. B, 14, 3702 (1996).

2. C. W. Chung, Y. H. Byun and H. I. Kim, Korean J. Chem. Eng., 19, 524 (2002).

3. S.-W. Hwang, G.-R. Lee, J.-H. Min and S. H. Moon, Korean J. Chem. Eng., 20, 1131 (2003).

4. T. Arikado, K. Horioka, M. Sekine, H. Okano and Y. Horiike, Jpn. J. Appl. Phys., 31, 2212 (1992).

5. T. Matsuura, H. Uetake, T. Ohmi, J. Murota, K. Fukuda, N. Mikoshiba, T. Kawashima and Y. Yamashita, Appl. Phys. Lett., 56, 1339 (1990).

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