A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation-Reference-Cited by-同舟云学术

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A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation

Published:1988 Issue: Volume: Page:251-258
ISSN:
Container-title:The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
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Author:

Massoud Hisham Z.,Plummer James D.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4899-0774-5_28

Reference34 articles.

1. S. M. Sze, Physics of Semiconductor Devices, 2nd Edition, Wiley-Interscience, John Wiley Sons, New York, 1981.

2. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley Sons, New York, 1982.

3. B. E. Deal, E. H. Snow, and C. A. Mead, J. Chem. Phys. Sol. 27, 1873 (1966).

4. W. M. Werner, Solid-State Electron. 17, 769 (1974).

5. S. Kar, Solid-State Electron. 18, 169 (1975).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7 × 7;Langmuir;2002-07-16

2. A Simple Model of the Chemical Nature of Bonds at the Si—SiO2 Interface and its Influence on the Electronic Properties of MOS Devices;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998

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