Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s42341-019-00107-9.pdf
Reference23 articles.
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3. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, H. Hosono, Amorphous oxide semiconductors for high-performance flexible thin-film transistors. Jpn. J. Appl. Phys. 45, 4303–4308 (2006)
4. J. Bang, S. Matsuishi, H. Hosono, Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications. Appl. Phys. Lett. 110, 232105 (2017)
5. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S.-H. Ko Park, C.-S. Hwang, R. Martins, Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing. Appl. Phys. Lett. 97, 052105 (2010)
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