Lanthanum Doped Zirconium Oxide (LaZrO2) High-k Gate Dielectric FinFET SRAM Cell Optimization
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-021-00296-2.pdf
Reference45 articles.
1. J.P. Colinge, Multiple-gate soi MOSFETs. Solid State Electron. 48(6), 897–905 (2004)
2. H. Iwai, Roadmap for 22 nm and beyond. Microelectron. Eng. 86(7–9), 1520–1528 (2009)
3. S. Stemmer, Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide–semiconductors. J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. Process. Meas. Phenom. 22(2), 791–800 (2004)
4. S.J. Wang, P.C. Lim, A.C.H. Huan, C.L. Liu, J.W. Chai, S.Y. Chow, J.S. Pan, Q. Li, C.K. Ong, Reaction of SiO 2 with hafnium oxide in low oxygen pressure. Appl. Phys. Lett. 82(13), 2047–2049 (2003)
5. J. Robertson, High dielectric constant oxides. Eur. Phys. J. Appl. Phys. 28(3), 265–291 (2004)
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