Reaction of SiO2 with hafnium oxide in low oxygen pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565182
Reference22 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. High temperature stability in lanthanum and zirconia-based gate dielectrics
5. Interface reactions in ZrO2 based gate dielectric stacks
Cited by 92 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. XPS study of the nitridation of hafnia on silicon;Applied Surface Science;2024-12
2. Hybrid HfC‐SiCN matrix for improved oxidation resistance of carbon fiber–reinforced mini‐composites;International Journal of Ceramic Engineering & Science;2024-02-22
3. The lattice vibration, mechanical anisotropy, stress-strain behavior and electronic properties of HfxSiy phases: A first-principles study;Vacuum;2023-06
4. Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors;Journal of Applied Physics;2023-04-12
5. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3