Reaction of SiO2 with hafnium oxide in low oxygen pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565182
Reference22 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High-κ gate dielectrics: Current status and materials properties considerations
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4. High temperature stability in lanthanum and zirconia-based gate dielectrics
5. Interface reactions in ZrO2 based gate dielectric stacks
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