Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. G. Dewey, B. Chu-Kung, J. Boardman et al., Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing, in Technical Digest - International Electron Devices Meeting, IEDM (2011), pp. 785–788
2. V. Brouzet, B. Salem, P. Periwal et al., Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire tunnel field effect transistor grown by vapor–liquid–solid mechanism. Solid-State Electron. 118, 26–29 (2016)
3. T. Vasen, P. Ramvall, A. Afzalian et al., Vertical gate-all-around nanowire GaSb-InAs core-shell n-type tunnel FETs. Sci. Rep. 9(1), 202 (2019)
4. J. Yoon, K. Kim, C. Baek, Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors. Sci. Rep. 23(7), 1–9 (2017)
5. D. Keighobadi, S. Mohammadi, Physical and analytical modeling of drain current of double-gate heterostructure tunnel FETs. Semicond. Sci. Technol. 34, 1–13 (2018)
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献