Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-36549-z.pdf
Reference23 articles.
1. Ionescu, A. & Riel, H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329–337 (2011).
2. Seabaugh, A. & Zhang, Q. Low-Voltage Tunnel Transistors for Beyond CMOS Logic. Proc. of the IEEE 98(12), 2095–2110 (2010).
3. Avci, U. E. et al. Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at L g = 13 nm, including P-TFET and variation considerations. IEEE International Electron Devices Meeting 33.4.1–33.4.4 (2013).
4. Afzalian, A., Passlack, M. & Yeo, Y. C. Scaling perspective for III-V broken gap nanowire TFETs: An atomistic study using a fast tight-binding mode-space NEGF model. IEEE International Electron Devices Meeting 30.1.1–30.1.4 (2016).
5. Memisevic, E., Svensson, J., Hellenbrand, M., Lind, E. & Wernersson, L.-E. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V. IEEE International Electron Devices Meeting 19.1.1–19.1.4 (2016).
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