Author:
O'Raifeartaigh C.,Larsen A. Nylandsted,Cristiano F.,Hemment P. L. F.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Cited by
2 articles.
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1. 2 MeV Si ion implantation damage in relaxed Si1−xGex;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
2. Rapid thermal annealing of arsenic implanted relaxed Si1−xGex;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12