The Effects of Si Submounts Containing Cu Thermal Vias on the Heat-Dissipation Characteristics of a High-Power Light-Emitting Diode Package-Reference-Cited by-同舟云学术

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The Effects of Si Submounts Containing Cu Thermal Vias on the Heat-Dissipation Characteristics of a High-Power Light-Emitting Diode Package

Published:2013-12-05 Issue:2 Volume:43 Page:630-635
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Kim M. Y.,Jeong T.,Ha J. S.,Oh T. S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-013-2918-z.pdf

Reference22 articles.

1. Y.B. Yoon and J.W. Park, IEEE Trans. Compon. Packag. Technol. 32, 825 (2009).

2. M. Arik and S. Weaver, Proceedings of the International Society for Optics and Photonics (Proc. SPIE) 5530, 214 (2004).

3. C.J. Weng, Int. Commun. Heat Mass 36, 245 (2009).

4. O.B. Shchekin, J.E. Epler, T.A. Trottier, T. Margalith, D.A. Steigerwald, M.O. Holcomb, P.S. Martin, and M.R. Krames, Appl. Phys. Lett. 89, 071109 (2006).

5. T. Jeong, K.H. Kim, S.J. Lee, S.H. Lee, S.R. Jeon, S.H. Lim, J.H. Baek, and J.K. Lee, IEEE Photon. Technol. Lett. 21, 890 (2009).

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1. A review on thermal management of light-emitting diodes: From package-level to system-level;Applied Thermal Engineering;2024-12

2. The Improvement of Bonding Metal Layers in a GaAs Vertical Structure Light-Emitting Diode Package;Journal of Electronic Materials;2020-08-09

3. Initial thermal stress and strain effects on thermal mechanical stability of through silicon via;Microelectronic Engineering;2016-11

4. Thermoelectric Thin Film Devices for Energy Harvesting with the Heat Dissipated from High-Power Light-Emitting Diodes;Journal of Electronic Materials;2016-04-08

5. Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability;Materials Science in Semiconductor Processing;2015-03

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