Investigation of Surface Defects in AlInSb Metamorphic Buffer (MB) Grown on GaSb-Reference-Cited by-同舟云学术

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Investigation of Surface Defects in AlInSb Metamorphic Buffer (MB) Grown on GaSb

Published:2016-10-20 Issue:12 Volume:45 Page:6258-6264
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Addamane Sadhvikas,Shima Darryl,Soudachanh Amy Lili,Hains Christopher,Dawson Ralph,Balakrishnan Ganesh

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-016-5032-1.pdf

Reference16 articles.

1. T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).

2. G.W. Turner, H.K. Choi, and M.J. Manfra, Appl. Phys. Lett. 72, 120922 (1998).

3. K. Kashani-Shirazi, K. Vizbaras, A. Bachmann, S. Arafin, and M.-C. Amann, I.E.E.E. Photon Technol. Lett. 21, 1106 (2009).

4. K. Vizbaras and M.C. Amann, Semicond. Sci. Technol. 27, 032001 (2012).

5. R. Kaspi, C.A. Lu, T.C. Newell, C. Yang, and S. Luong, J. Cryst. Growth 424, 24 (2015).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of InGaSb/AlInGaSb quantum cascade laser structures on GaSb substrates by molecular beam epitaxy;Journal of Crystal Growth;2024-06

2. Investigation of digital alloyed AlInSb metamorphic buffers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03

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